| 摘要 |
PURPOSE:To obtain a resist having high transparency, excellent plasma etching resistance and excellent sensitivity and resolution for the far ultraviolet rays by using a copolymer of vinyl cyclohexane and maleimide or a maleimide derivative. CONSTITUTION:Vinyl cyclohexane and maleimide are dissolved in a solvent then heated and polymerized under the existence of azoisobutylonitrile as a reaction initiator. A polymer thus obtained is dissolved in a solvent together with a cross linking agent to obtain a resist with excellent transparency and etching resistance. This resist is coated on a substrate, it is selectively exposed to ultraviolet rays, it is developed with alkali, and a sub-micron pattern with high precision can be obtained. |
