| 摘要 |
PURPOSE:To prevent the malfunction due to the input of a noise electric charge generated on a bit/sense line, by adding a transistor (TR) for forming a potential barrier. CONSTITUTION:A voltage V1 is impressed to the gate electrode of an n-channel MOS TR 15 for forming a potential barrier. N-channel MOS TRs 16 and 17 for precharging precharge nodes 18 and 19 up to VCC-VT by a control signal phi having an amplitude VCC. A voltage V0 (<VCC) is impressed to the gate electrode of a TR 14 to precharge a bit/sense line 11 up to V0-VT. When the voltage V1 is so set that V0<V1<VCC is true, a channel surface potential V1-VT of the TR 15 is higher than the potential of nodes 18 and 19 and is lower than the potential of the bit/sense line 11. Even if a noise electric charge QN smaller than a signal electric charge QS is flowed to the sense circuit through the TR 14 from the bit/sense line 11, it is trapped by a potential well of the intermediate node 18 to have no influence upon the potential of the input node 19. |
