| 摘要 |
PURPOSE:To increase switching rate, and to reduce currents consumed by using a GDD transistor only for a required section. CONSTITUTION:An insulating film 2 for element isolation and a gate insulating film 3 are formed onto a semiconductor substrate 1, gate electrodes 4a, 4b for a transistor are shaped according to a pattern, a resist is formed to the surface, and a resist 8 blocking the implantation of a first impurity is left in a region of the conventional structure. The first impurity is introduced into a region of GDD structure in a self-alignment manner, using the gate electrode 4a as a mask through a method such as ion implantation. The resist 8 is peeled, and N<-> regions 7a (as a source and a drain) are shaped through heat treatment, lamp annealing, etc. A second impurity is introduced similarly to the whose surface, and N<+> regions 7b (as a source and a drain) are formed. Accordingly, transistors having a GDD structure and a conventional structure can be made to coexist on the same substrate 1. |
