| 摘要 |
PURPOSE:To manufacture an MIS light emitting semiconductor device composed of a semiconductor, an insulating film and a metal electrode with a low failure rate by composing the insulating film of an anode-oxidized film of a metal thin film. CONSTITUTION:A metal thin film 7 of Al, Ta, Ti or the like is formed on a cleft surface of the bulk crystal 6 of low resistance N-type ZnSxSe1-x. A lead wire is drawn out from the thin film 7 or the crystal 6 and the film 7 is subjected to anode oxidization. A metal electrode 9 is laminated on an insulating film 8 formed by the anode oxidation. Then In, In-Ga or In-Hg is applied to the crystal 6 by coating, press adhesion or evaporation and annealed to form an ohmic contact 10. Lead wires 11 are drawn out from the contact 10 and the electrode 9. By composing the insulating film of the anode-oxidized film of the metal thin film as described above, an insulating film which has few pin-holes even if the film is thin can be produced and a semiconductor device with a low failure rate can be obtained. |
