| 摘要 |
PURPOSE:To prevent an overprogram from occurring by reducing a distance between the centers of emitter regions shorter than that between the centers of base regions to displace the centers of the emitter regions of a memory cell to the center side of collector connections. CONSTITUTION:The distance L1 between the centers of emitter regions 1a, 1b is reduced more than that L2 between the centers of the regions 2a, 2b to displace the centers of the regions 1a, 1b from the centers of the base regions 2a, 2b toward the center sides between connector connections Ca and Cb. Thus, the interval of the junctions between the emitters 1a, 1b and the bases 2a, 2b in the minimum resistance value path (a) and the junctions between the bases 2a, 2b and the collectors 3a, 3b is all larger in memory cells Ma, Mb than conventional. Accordingly, the interval is obtained so as to eliminate an overprogram even in the cell Ma in which both junctions are narrowed because of a mask matching error. In case of programming, the only emitter 1a and the base 2a are damaged therebetween to form a short-circuiting point (b), the base 2a and the collector 3a are not short-circuited therebetween to readily increase the memory capacity. |
