| 摘要 |
PURPOSE:To heat a wafer uniformly by a method wherein the temperature of a base body or a material to be compared except the base body is monitored, the power of a heating source heating the surface and back of the base body is adjusted automatically, a temperature gradient in a base-body surface is kept at a specific value or lower and the temperature of the base body or the material to be compared is elevated or lowered. CONSTITUTION:When a large-diameter wafer is heated equally from both the surface and the back, the wafer is warped and temperature distribution is generated in the radial direction of the wafer on temperature rise and drop when the ratio of the quantity of heating of the surface to the back is unbalanced, and a slip dislocation is generated. A material to be compared 11 having a small area in which a warpage generated due to the unbalance of the quantity of heating of upper and lower sections can be ignored is fitted by a base body 10 as a means eliminating the unbalanced of the ratio of the quantity of heating, and an Si piece having the same thickness as the base body is selected as the material to be compared. The surface temperatures of the central section and peripheral section of the base body 10 and the material to be compared 11 are controlled so as to be conformed by an automatic heating power regulator 110 while being monitored by an infrared temperature detector 100, and a temperature gradient in a base-body surface is kept at at least 6 deg.C/cm or less and the base body is heated so as to elevate or lower the temperature, thus increasing an output and reducing cost by the improvement of the rate of aquirement of chips per the wafer. |
