| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit of no mutual interference of actions of adjacent MESFET's by a method wherein the MESFET's are so formed, on a semiconductor active region formed in island form, that an ohmic electrode, a Schottky electrode, and an ohmic electrode successively from inside respectively surround the inside electrodes. CONSTITUTION:The active region 32 composed of GaAs is formed in island form on a semi-insulation substrate 31, further the ohmic electrode 33 and the ohmic electrode 34 which surrounds it are formed, and they are decided respectively as the drain and source electrodes of the MESFET. The ring shaped Schottky electrode 35 is formed between the electrodes 33 and 34, which is decided as the gate electrode of the MESFET. They are connected respectively to wirings 39, 40 and 41 via wiring connection windows 36, 37 and 38 formed through insulation film. Thereby, there is no case that adjacent MESFET gate electrodes are coupled each other in electric manner by the leakage resistance of the semi- insulation substrate 31. |
