| 摘要 |
PURPOSE:To produce a long-sized titled single crystal having a prescribed compsn. in the compsn. range near the m.p. of a semiconductor by bisecting the melt of a raw material to two melts for growth and supply differing in the deviation from the compsn. of a chemical equiv. ratio from each other by means of a partition wall provided with a small hole and melting and replenishing the melt for supply continuously. CONSTITUTION:The upper part of a crucible 2 is heated to high temp. and the lower part to the temp. lower than the m.p. of GaSb with a carbon heater 4 so as to form a melt 10 of GaSb in the upper part and a solid 11 in the lower part. A melt 9 is formed in a tray-like member 13 by the inflow of a melt 10 through a small hole 14, and the melts 9, 10 are covered with melt layers 8, 12 of liquid capsule agents. A stopper 17 is then opened to supply the excess Sb particle only to the melt 9 and the role of the supply device is finished. The compsn. of the melt 10 is approximately a chemical equiv. ratio. The Sb% in the remaining melt is going to increase with the growth of a single crystal 23 from the melt 9, but the compsn. of the melt 9 is maintained constant by the melt 10 supplied through the hole 14. A lower driving shaft 5 is moved upward to melt the solid 11 in order to make up the decrease in the depth of the melt 10. |
