发明名称 |
METHOD FOR FABRICATING GATE HOLE, FIELD EMISSION DISPLAY DEVICE, AND METHOD FOR FABRICATING THE SAME |
摘要 |
PURPOSE: A method for fabricating a gate hole, a field emission display device, and a method for fabricating the same are provided to control discharging current by perform a fabricating process of a fine gate hole by using an anode oxidation process. CONSTITUTION: An anode electrode(21) and a fluorescent material(22) are laminated on an upper substrate(27). An electron source such as a metal tip, a catalysis metal(16), and a carbon nano tube(17), a cathode electron and a resistance layer, a gate electrode formed on the resistance layer, and an insulating layer formed on the gate electrode are formed on a lower glass substrate(10). A spacer is formed on the lower glass substrate(10) in order to maintain a gap between the lower glass substrate(10) and the upper substrate(27) when the lower glass substrate(10) and the upper substrate(27) are adhered to each other.
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申请公布号 |
KR20020041665(A) |
申请公布日期 |
2002.06.03 |
申请号 |
KR20000071341 |
申请日期 |
2000.11.28 |
申请人 |
LG ELECTRONICS INC.;POSTECH FOUNDATION |
发明人 |
CHO, WON GI;HWANG, HUI YEONG;JUNG, SU HWAN;LEE, GEON HONG |
分类号 |
H01J1/30;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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