发明名称 METHOD FOR FABRICATING GATE HOLE, FIELD EMISSION DISPLAY DEVICE, AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A method for fabricating a gate hole, a field emission display device, and a method for fabricating the same are provided to control discharging current by perform a fabricating process of a fine gate hole by using an anode oxidation process. CONSTITUTION: An anode electrode(21) and a fluorescent material(22) are laminated on an upper substrate(27). An electron source such as a metal tip, a catalysis metal(16), and a carbon nano tube(17), a cathode electron and a resistance layer, a gate electrode formed on the resistance layer, and an insulating layer formed on the gate electrode are formed on a lower glass substrate(10). A spacer is formed on the lower glass substrate(10) in order to maintain a gap between the lower glass substrate(10) and the upper substrate(27) when the lower glass substrate(10) and the upper substrate(27) are adhered to each other.
申请公布号 KR20020041665(A) 申请公布日期 2002.06.03
申请号 KR20000071341 申请日期 2000.11.28
申请人 LG ELECTRONICS INC.;POSTECH FOUNDATION 发明人 CHO, WON GI;HWANG, HUI YEONG;JUNG, SU HWAN;LEE, GEON HONG
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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