| 摘要 |
A method of selectively etching a substrate to form areas of a predetermined depth by first etching through an etch resistance mask to a substantial portion of the depth to be etched, removing the etch resistant mask and, finally, etching the remaining material in the selective areas by exposing the substrate to a second etchant. The method prevents contaminants from the first etchant, the etch mask and the original surface to be etched from contacting the finally etched surface of the second etch step.
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