发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: The method is for forming resistor lay out of a semiconductor device enabling the fabrication of large integrated semiconductor device by minimizing the area of a resistor lay out part by forming a resistor using two layers of a poly-1 and a poly-2. CONSTITUTION: The method can reduce the area a resistor occupies in the lay out considerably by lay out using two layers of a poly-1 layer(1) and a poly-2 layer(3) simultaneously, and can adjust the resistance using a contact(5) when it is needed to adjust the resistance in the revision step.
申请公布号 KR20000003609(A) 申请公布日期 2000.01.15
申请号 KR19980024869 申请日期 1998.06.29
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 SIN, BO HYUN
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
代理机构 代理人
主权项
地址