发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: The method is for forming resistor lay out of a semiconductor device enabling the fabrication of large integrated semiconductor device by minimizing the area of a resistor lay out part by forming a resistor using two layers of a poly-1 and a poly-2. CONSTITUTION: The method can reduce the area a resistor occupies in the lay out considerably by lay out using two layers of a poly-1 layer(1) and a poly-2 layer(3) simultaneously, and can adjust the resistance using a contact(5) when it is needed to adjust the resistance in the revision step.
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申请公布号 |
KR20000003609(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980024869 |
申请日期 |
1998.06.29 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
SIN, BO HYUN |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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