System for electrical testing of through-silicon vias (TSVs), and corresponding manufacturing process

摘要

An embodiment of a process for manufacturing a system for electrical testing of a through via extending in a vertical direction through a substrate of semiconductor material envisages integrating an electrical testing circuit in the body to enable detection of at least one electrical parameter of the through via through a microelectronic buried structure defining an electrical path between electrical-connection elements towards the outside and a buried end of the through via; the integration step envisages providing a trench and forming a doped buried region at the bottom of the trench, having a doping opposite to that of the substrate so as to form a semiconductor junction, defining the electrical path when it is forward biased; in particular, the semiconductor junction has a junction area smaller than the area of a surface of the conductive region in a horizontal plane transverse to the vertical direction, in such a way as to have a reduced reverse saturation current.

主权项

1. A semiconductor structure, comprising:
a substrate having a first type of conductivity; a first trench formed in the substrate and having a trench wall and a trench bottom; a first insulator having a wall layer disposed over the trench wall and having a bottom layer disposed on the trench bottom and extending inwardly from the wall layer; a first opening formed in the bottom layer disposed on the trench bottom, the first opening being smaller than the trench bottom; a first region of a second type of conductivity disposed in the substrate in alignment with the first opening, the first region having a width that is larger than a width of the first opening but smaller than a width extending between opposed inner edges of the wall layer for the first insulator; and a first conductor disposed in the trench over the first insulator and in contact with the first region through the first opening.