| 发明名称 |
Method of manufacturing bonded wafer |
| 摘要 |
The present invention provides a method of manufacturing a bonded wafer. The method includes ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer. |
| 申请公布号 |
EP1970949(B1) |
申请公布日期 |
2017.03.22 |
| 申请号 |
EP20070024471 |
申请日期 |
2007.12.18 |
| 申请人 |
SUMCO Corporation |
发明人 |
Morimoto, Nobuyuki;Endo, Akihiko |
| 分类号 |
H01L21/762;H01L21/02;H01L21/20;H01L21/306 |
主分类号 |
H01L21/762 |
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