| 发明名称 |
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER ANNEALING |
| 摘要 |
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous. |
| 申请公布号 |
US2017005006(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201514755829 |
申请日期 |
2015.06.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDO Takashi;DASGUPTA Aritra;GLUSCHENKOV Oleg;KANNAN Balaji;KWON Unoh |
| 分类号 |
H01L21/8234;H01L21/263;H01L27/088;H01L21/28;H01L29/423;H01L29/51 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure, comprising:
a high-k gate dielectric stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous; a blocking layer deposited on a pFET side of the high-k dielectric stack; and a lanthanum oxide film deposited on the blocking material and an exposed portion of the high-k bilayer or nanolaminate on a nFET side of the high-k dielectric stack. |
| 地址 |
Armonk NY US |
