| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wiring structure with high electromigration resistance and high reliability.SOLUTION: A method of manufacturing a semiconductor device includes the steps: forming a metal mask having a predetermined opening pattern, on an insulating film provided on a substrate; forming a wiring groove to the insulating film by using the metal mask; forming a barrier metal by a material different from that of the metal mask, on the whole surface including an inner wall of the wiring groove and the metal mask; growing a copper plating layer on the barrier metal; flattening the copper plating layer to form a copper wire in the wiring groove; performing electrolysis removal of the barrier metal exposed by the flattening by using the metal mask as an electrode; and removing the metal mask to form a cap film on the copper wire. |
