发明名称 |
DIRECTED VAPOR DEPOSITION ASSISTED BY A COAXIAL HOLLOW CATHODE PLASMA, AND RELATED METHOD THEREOF |
摘要 |
A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased. |
申请公布号 |
EP2401232(B1) |
申请公布日期 |
2016.01.06 |
申请号 |
EP20100746778 |
申请日期 |
2010.02.24 |
申请人 |
UNIVERSITY OF VIRGINIA PATENT FOUNDATION;FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
WADLEY, HAYDN N. G.;MATTAUSCH, GOESTA;MORGNER, HENRY;ROEGNER, FRANK-HOLM |
分类号 |
C01B33/12;C23C16/513;H01J37/305;H01J37/32;H01J37/34;H05H1/24 |
主分类号 |
C01B33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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