| 摘要 |
PROBLEM TO BE SOLVED: To suppress recombination of electrons in a crystal grain boundary, in a light absorption layer comprising a polycrystalline substance of a compound semiconductor containing at least Sn and Ge and a photoelectric element including the light absorption layer.SOLUTION: A light absorption layer comprises a polycrystalline substance of a compound semiconductor containing at least Sn and Ge. In the compound semiconductor, a conduction band lower end mainly comprises an electron orbit of Sn and/or Ge, and a valence band upper end mainly comprises an electron orbit of elements other than Sn and Ge. In the light absorption layer comprising a polycrystalline substance of a compound semiconductor, a Ge composition ratio in a grain boundary is made higher than that in particles. A photoelectric conversion element includes the light absorption layer. |
