发明名称 |
Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells array of nonvolatile memory cells |
摘要 |
A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material. |
申请公布号 |
US8652909(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213532483 |
申请日期 |
2012.06.25 |
申请人 |
SILLS SCOTT E.;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
SILLS SCOTT E.;SANDHU GURTEJ S. |
分类号 |
H01L21/8236;H01L21/3205 |
主分类号 |
H01L21/8236 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|