| 摘要 |
Improved methods and systems for the passivation of a high mobility semiconductor surface, and structure and devices made by the methods are disclosed. The methods include: a step of providing a high mobility semiconductor surface for the chamber of a reactor; and a step of passivating the high mobility semiconductor surface by exposing the high mobility semiconductor surface to a gas-phase sulfur precursor. [Reference numerals] (108) Sulfur precursor source; (110) Carrier/fudge sauce; (116) Cleaning source; (126) Vacuum pump |
