发明名称 MICROSTRUCTURED ELECTRODE STRUCTURES
摘要 A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.
申请公布号 WO2013112670(A1) 申请公布日期 2013.08.01
申请号 WO2013US22868 申请日期 2013.01.24
申请人 ENOVIX CORPORATION 发明人 LAHIRI, ASHOK;SPOTNITZ, ROBERT;SHAH, NIRAV;RAMASUBRAMANIAN, MURALI;RUST III, HARROLD J.;WILCOX, JAMES D.;ARMSTRONG, MICHAEL J.;BRUSCA, BRIAN;CASTLEDINE, CHRISTOPHER;LAUCHLAN, LAURIE J.
分类号 H01M4/02;H01M4/13;H01M4/134;H01M4/38;H01M10/05 主分类号 H01M4/02
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