METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING MICROPHONE

摘要

A plurality of acoustic sensors (51) is provided on an Si wafer (73). A plurality of interposers (52) having a cavity (70), penetrating electrodes (65, 66), and the like is integrally formed using an Si wafer (74). That surface of the acoustic sensors (51) which is opposite the Si wafer (73) is joined and integrated with the interposers (52). The Si wafer (73) of the acoustic sensors (51) is then polished and the thickness of the Si wafer (73) is reduced in a state in which the acoustic sensors (51) and the interposers (52) are joined and integrated. The Si wafer (73) and the separate acoustic sensors (51), the sensors being divided into separate elements while remaining joined, are then installed in a package together with a signal processing circuit.