METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, in which a gate insulating film is formed on a nitride containing GaN by using microwave plasma.

SOLUTION: The semiconductor device comprises a gate insulating film 19b formed from between an FET structure in which a GaN layer 13 and an AlGaN layer 14a are laminated and a gate electrode 20 to between a field oxide film 15 and the gate electrode 20. The gate insulating film 19b has a two-layer structure composed of an alumina 24a and a silicon oxide film 24b.

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