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发明名称
Enhancement normally off nitride smiconductor device and manufacturing method thereof
摘要
申请公布号
KR101172857(B1)
申请公布日期
2012.08.09
申请号
KR20090124126
申请日期
2009.12.14
申请人
发明人
分类号
H01L29/78
主分类号
H01L29/78
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代理人
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