SINGLE ELECTRON TRANSISTOR HAVING EXTENDED CHANNEL AND FABRICATION METHOD OF THE SAME

摘要

PURPOSE: A single electron transistor with an extended channel and a processing method thereof are provided to reduce a MOSFET current by forming a channel in a recessed silicon fin. CONSTITUTION: A silicon layer(18) is vertically recessed to have a recessed channel region on a buried oxide layer of an SOI substrate. A first gate insulating layer is formed on the channel region. A first side gate and a second side gate are separated on both edges of the channel region in a channel direction while interposing the first gate insulating layer. A control gate(66a) is formed on the buried oxide layer. The second gate insulation layer is formed between each side gate(92) and the control gate.