FLOATING GATE, METHOD OF FORMING FLOATING GATE, METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE USING THE SAME AND NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A floating gate, method of forming floating gate, method of fabricating non-volatile memory device using the same and non-volatile memory device are provided to secure the thermal stability of the metal nano crystal by the chemical vapor deposition. CONSTITUTION: A floating gate, method of forming floating gate, method of fabricating non-volatile memory device using the same and non-volatile memory device comprises as follows. The tunneling oxide film(12) is formed on the semiconductor substrate(10). A binder is provided that is bonded with the metal nano crystal and ionic bond in the tunneling oxide film. The seed layer(14) for preventing the diffusion of tunneling oxide film is formed on the metal nano crystal(16). The metal nano crystal for storing the electric charge is formed.