| 摘要 |
A semiconductor device and a method for fabricating the same may improve the isolation characteristics without deterioration of the junction diode characteristics and an increase in a threshold voltage of a MOS transistor. The device includes a semiconductor substrate; an STI layer in a predetermined portion of the semiconductor substrate, dividing the semiconductor substrate into an active region and a field region; and a field channel stop ion implantation layer in the semiconductor substrate under the STI layer.
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