| 摘要 |
A semiconductor device 10 includes a semiconductor element 12; a group of back-inner terminals 14 coupled with the semiconductor element 12 through bonding wires 13 and arranged in an area array shape so as to be exposed inside of the bottom; a group of back-outer terminals 15 arranged outside the group of back-inner terminals 14; a group of front-outer terminals 17 located immediately above the back-outer terminals 15 to be exposed from the front surface, which are electrically coupled with the back-outer terminals 15 located immediately therebelow through coupling conductors 16, respectively; and a sealing resin 18 which seals the semiconductor element 12 and bonding wires 13 and non-exposed portions of said back-inner terminals 14, back-outer terminals 15 and front-outer terminals 17. On at least the respective terminal faces of said back-inner terminals 14, back-outer terminals 15 and front-outer terminals 17, noble-metal plated layers 19, 19b are formed. |
