METHOD FOR FORMING HARD MASK PATTERN IN SEMICONDUCTOR DEVICE

摘要

The mask having the pitch less than the resolution of exposure equipment can be formed by forming the second hard mask pattern in a space between the first hard mask patterns by etching the separation film. A method of forming the hard mask pattern in the semiconductor device is provided. A step is for forming the etch target layer(101) on the semiconductor substrate(100). A step is for forming the first hard mask pattern on the etch target layer. A step is for forming a separation film on the etch target layer including first hard mask pattern. A step is for forming the hard mask film on the separation film formed on the space between the first hard mask patterns. A step is for forming the second hard mask pattern in which the separation film(104) and hard mask film are laminated by removing the separation film formed in the top and side wall of the first hard mask pattern.