| 摘要 |
A nonvolatile semiconductor memory device including a memory cell array including a plurality of electrically rewritable nonvolatile memory cells arranged in series, the memory cell storing data using a plurality of threshold levels, a threshold level storage section storing a programming method switch threshold level on which a first programming method and a second programming method are switched, a comparison circuit comparing the programming method switch threshold level with a programming data threshold level and outputting a comparison result, a control signal generation circuit setting the first programming method or the second programming method based on the comparison result and outputting a control signal corresponding to the first programming method or the second programming method and a voltage generation circuit generating a programming voltage and an intermediate voltage which are applied to the memory cell based on the control signal.
|
