| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a single crystal SiC layer with excellent crystallity and surface morphology on an Si substrate. SOLUTION: The main point of this method is to form the single crystal SiC layer with excellent crystallity and surface morphology by forming an SiGe layer and an amorphous SiC whose melting point is lower than that of Si and SiC on the Si layer, and heating the layered structure to a melting point of SiGe or over so as to relax distortion between the SiC and the Si substrate, and also to apply crystallization to the amorphous SiC at the same time. COPYRIGHT: (C)2007,JPO&INPIT
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