发明名称 |
Semiconductor image sensor module, method for manufacturing the same as well as camera and method for manufacturing the same |
摘要 |
A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained. A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2 , wherein a plurality of bump electrodes 15 a are formed on a first main surface, a plurality of bump electrodes 15 b are formed on the image signal processing chip 3 , both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15 a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15 b on the image signal processing chip 3 are electrically connected. |
申请公布号 |
US2006091290(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050253255 |
申请日期 |
2005.10.18 |
申请人 |
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发明人 |
YOSHIHARA IKUO;YAMANAKA MASAMITSU |
分类号 |
H01L27/00;H01L27/14;H01L31/00;H04N5/225;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N101/00 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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