发明名称 |
Process for a flash memory with high breakdown resistance between gate and contact |
摘要 |
A selfaligned process for a flash memory comprises applying a solution with a high etch selectivity to etch the sidewall of the tungsten silicide in the gate structure of the flash memory during a clean process before forming a spacer for the gate structure. This process prevents the gate structure from degradation caused by thermal stress.
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申请公布号 |
US6908814(B2) |
申请公布日期 |
2005.06.21 |
申请号 |
US20030725556 |
申请日期 |
2003.12.03 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
JENG PEI-REN;YANG LIN-WU |
分类号 |
H01L21/28;H01L21/336;H01L21/44;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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