发明名称 |
Method for forming MRAM bit having a bottom sense layer utilizing electroless plating |
摘要 |
The present invention provides a method of forming an MRAM cell which minimizes the occurrence of electrical shorts during fabrication. A first conductor in a trench is provided in an insulating layer and an upper surface of the insulating layer and the first conductor is planarized. Then, a dielectric layer is deposited to a thickness slightly greater than the desired final thickness of a sense layer, which is formed later. The dielectric layer is then patterned and etched to form an opening for the cell shapes over the first conductor. Then, a permalloy is electroplated in the cell shapes to form the sense layer. The sense layer and dielectric layer are flattened and then a nonmagnetic tunnel barrier layer is deposited. Finally, the pinned layer is formed over the tunnel barrier layer.
|
申请公布号 |
US2004152265(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20040761247 |
申请日期 |
2004.01.22 |
申请人 |
NEJAD HASAN;DEAK JAMES G. |
发明人 |
NEJAD HASAN;DEAK JAMES G. |
分类号 |
G11B5/147;H01L21/00;H01L21/336;H01L21/4763;H01L27/22;H01L29/82;H01L43/12;(IPC1-7):H01L21/336 |
主分类号 |
G11B5/147 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|