CAM cell

摘要

A Content Addressable Memory (CAM) cell is disclosed having an physical implementation of transistors for improving the semiconductor substrate area utilization of the CAM cell and the CAM array. The CAM cell comprises a first and second memory circuit and a compare circuit. The compare circuit of six transistors formed over two active regions. The local interconnect between the compare circuit and the first memory circuit formed of a polysilicon region. The local interconnect between the compare circuit and the second memory circuit formed of polysilicon and conductive regions.