| 摘要 |
PROBLEM TO BE SOLVED: To form a thyristor or SCR whose discharging efficiency is satisfactory when static electricity is impressed in a semiconductor device using an SOI substrate. SOLUTION: This semiconductor device is provided with a connecting terminal connected to the outside, an insulating substrate 1 having a semiconductor layer, a first conductive first area 2 formed in the semiconductor layer and electrically connected to the connecting terminal, a second conductive second area 3 formed in the semiconductor layer and electrically connected to the first area, a first conductive third area 4 formed in the semiconductor layer adjacently to the second area, and a second conductive fourth area 5 formed in the semiconductor layer adjacently to the third area. COPYRIGHT: (C)2003,JPO
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