发明名称 Method and apparatus for manufacturing semiconductor device, and semiconductor device manufactured by the method
摘要 In connection with a method of manufacturing a semiconductor device including a step of establishing electrical connection between terminal electrodes of a circuit board and electrode pads of a semiconductor substrate by means of ultrasonic vibration, prevention of flaws stemming from ultrasonic vibration is aimed. A semiconductor substrate is mounted on the surface of an insulation circuit board such that terminal electrodes of the insulation circuit board oppose electrode pads of a semiconductor board. Desired electrical connection is established by means of applying ultrasonic vibration between a first holding tool for holding the insulation circuit board and a second holding tool for holding the semiconductor substrate. Ultrasonic vibration is applied while intermediate material of lower hardness is interposed between the first holding tool and the insulation circuit board and while another intermediate material of lower hardness is interposed between the second holding tool and the insulation circuit board.
申请公布号 US6509206(B2) 申请公布日期 2003.01.21
申请号 US20010828942 申请日期 2001.04.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 IWASAKI TOSHIHIRO;YAMADA SATOSHI
分类号 H01L21/607;H01L21/60;H01L21/68;(IPC1-7):H01L21/44 主分类号 H01L21/607
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