| 摘要 |
A method of forming a shallow trench isolation structure. A substrate is provided. A pad oxide layer and a mask layer are sequentially formed over the substrate. The substrate is patterned to form a trench in the substrate. A high-density plasma chemical vapor deposition (HDPCVD) having a high etching/deposition ratio is conducted to form an insulation layer over the substrate that also completely fills the trench. The etching/deposition ratio in the HDPCVD step is between about 0.15 and 0.6. Insulating material outside the trench region is removed. Finally, the mask layer and the pad oxide layer are sequentially removed to form a complete STI structure.
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