| 摘要 |
PROBLEM TO BE SOLVED: To provide the forming method of a resist pattern, which can form a comparatively larger pattern which does not reach the limit of a resolution using a KrF exposure technique, and an extremely microscopic pattern which is under the limit of the resolution using the KrF exposure technique, simultaneously and favorably, and to provide an aligner which is used for this forming method. SOLUTION: A circular pattern of a dimension made larger than a finally necessary pattern dimension to the rate of reduction and a circular pattern of the finally necessary pattern dimension are subjected to respectively pattern exposure simultaneously to a reduced object region on a resist film 10 (Figure 1 (A)), which is formed on the surface of an SiO2 film 12 and consists of a TDUR-P015 film, and to a non-reduced object region on the film 10 with deep UV light of a wavelength of 248 nm (Figure 1 (B)), the exposure of the UV light of so a quantity that the heat resistance of the TDUR-P015 film constituting the film 10 is enhanced and a resist pattern (Figure 1 (C)) obtained by developing stops reducing is given to the non-reduced object region only on the resist-pattern (Figure 1 (D)) and the resist pattern is subjected to high- temperature baking treatment for 60 seconds at 135 degrees (Figure 1 (E)). |
