| 摘要 |
PROBLEM TO BE SOLVED: To lessen a through-dislocation which greatly affects the characteristics of a group III nitride semiconductor device and to restrain pits from being formed in a GaN layer which is laminated on a sapphire substrate. SOLUTION: An undoped GaN layer 3 of prescribed thickness is grown on a sapphire substrate 1, where a low-temperature buffer layer 2 is formed through MOCVD. Then, a GaN layer 4, which contains magnesium as a dopant is laminated thereon at a lower pressure than the GaN layer 3, by which pits formed in the GaN layer 3 are filled with the GaN layer 4, and the surface of the GaN layer 4 becomes flat. |
