Silicon single crystal wafer having few crystal defects, and method for producing the same

摘要

In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm2/ DEG C.xmin at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient ( DEG C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400 DEG C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850 DEG C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.