发明名称 Semiconductor fuse structures
摘要 <p>An improved fuse structure placed within an integrated circuit is provided. The fuse structure comprises a filament (18) extending over a raised or thickened insulating surface (14). When the filament is programmed or blown, the raised or thickened underlayer ensures the filament is blown at a select location near the sloped sidewall of the underlayer, and further ensures a clean separation of the filament and that the filament is less likely to regrow after it is blown. Various types of underlayer structures can be used to provide a filament extending in an elongated arcuate path which is raised above and thermally isolated from the substrate. <IMAGE></p>
申请公布号 EP0618620(B1) 申请公布日期 1999.11.24
申请号 EP19940302043 申请日期 1994.03.22
申请人 ADVANCED MICRO DEVICES INC. 发明人 GRAMS, MICHAEL L.;ACHEE, EHREN T.
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L23/525 主分类号 H01L21/82
代理机构 代理人
主权项
地址