| 摘要 |
PURPOSE: To provide a manufacturing method of a semiconductor element wherein the withstand voltage of a Schottky electrode can easily be improved at a low cost, without necessitating complicated process and structure, and the leakage current of the Schottky electrode can be reduced. CONSTITUTION: A source electrode 3 and a drain electrode 4 are formed on an active layer 2 in the upper part of a compound semiconductor substrate 1. By applying plasma treatment to the active layer 2 between the source electrode 3 and the drain electrode 4, a modified layer 2a is formed, on which a Schottky electrode 7a constituting a Schottky junction is formed. |
