发明名称 Process for preparing high crystallinity oxide thin film.
摘要 A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources and an oxidizing gas is locally supplied to the vicinity of the substrate. <IMAGE>
申请公布号 EP0633331(A1) 申请公布日期 1995.01.11
申请号 EP19940401516 申请日期 1994.07.01
申请人 SUMITOMO ELECTRIC INDUSTRIES, LIMITED 发明人 TANAKA, SO;IIYAMA, MICHITOMO
分类号 C23C14/00;C23C14/08;C23C14/24;C30B23/02;H01L39/24 主分类号 C23C14/00
代理机构 代理人
主权项
地址