| 摘要 |
PURPOSE:To provide a high withstand voltage silicon carbide Schottky diode in which the problem of concentration of an electric field on the edge part of a Schottky electrode can be solved. CONSTITUTION:The Schottky diode is provided with a silicon carbide substrate 1, an active layer 2 consisting of first conductive type silicon carbide formed on the silicon carbide substrate 1, an insulating film with an aperture part formed on the active layer 2, and a Schottky electrode 4 formed on the active layer 2 exposed from the aperture part. On the Schottky electrode 4, the active layer 2 and a Schottky junction are formed, and the edge part of the Schottky electrode 4 is present on the insulating film. |
