| 摘要 |
A conventional microwave over has been modified such that it may be used for plasma etching and cleaning. Oxygen or Argon gas is introduced into a vacuum chamber (18) inside a conventional microwave oven (10) that has been modified to allow gas from a canister outside the microwave oven to pass through the rear wall of the microwave oven into the vacuum chamber (18). A rotating antenna (16) ignites the gas to produce a uniform plasma which etches the substrate (28). Reaction by products are evacuated from the vacuum chamber by a vacuum pump positioned outside the microwave oven (10). The intensity of the microwaves can be adjusted for plasma etching via a maximum power control device which has been added to the electronic control circuit of the microwave oven. In addition, a vacuum chamber with a water cooling feature is provided to prevent thermal damage to the substrate during plasma processing.
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