| 摘要 |
PURPOSE:To attain finer wiring pattern, higher integration and improved yield by a method wherein a wiring comprising Al or Al contained alloy is connected to an Au base electrode through the intermediary of a tungsten nitride (WN) film. CONSTITUTION:An N-type layers 12 to be active layers are formed on e.g. a semiinsulating GaAs substrate 11. Firstly an SiO2 film 13 is deposited on overall surface while the SiO2 film 13 is coated with photoresist 14 and then etched using the photoresist 14 as a mask. Secondly an AuGe alloy film 15 and a WN film 16 are successively and continuously evaporated. Thirdly the photoresist 14 is removed to lift off any needless parts of alloy film 15 and WN film 16 further forming an ohmic electrode to the N-type layer 12 by heat treatment. Moreover after depositing an SiO2 film 10 on overall surface of substrate 11 and forming openings on the WN film 16, an Al film 18 is evaporated and patterned to form a wiring. Through these procedures, finer wiring, pattern higher integration and improved yield of an integrated circuit may be attained. |
