| 摘要 |
PURPOSE:To enable a high speed operation of a field effect transistor by extending source and drain electrodes from the source and drain regions, respectively to the vicinity of a gate electrode on a low impurity density region between the both regions, thereby reducing source and drain resistances. CONSTITUTION:Source and drain electrodes 5, 6 are extended through on an n<-> type region 4 to the vicinity of gate electrodes 7 thereof. For example, n<+> type or n<-> type regions are used for source and drain regions 2, 3 to reduce the ohmic contacting resistances of the electrodes 5, 6. Thus, a GaAs MESFET which enables a high speed operation can be obtained. |
