发明名称 |
Semiconductor memory with charge pump circuit. |
摘要 |
<p>A semiconductor device, provided with a buffer, comprises a first transistor for pulling up the output terminal voltage, a second transistor for pulling down the output terminal voltage, and a charge-pumping circuit for maintaining the output terminal voltage at a level higher than the power source voltage by charge pumping when the output terminal voltage is at a high level. The semiconductor device further comprises a circuit for pulling down the output terminal voltage during the period from the point of application of power to the point of initiation of supply of an input signal to the buffer.</p> |
申请公布号 |
EP0109139(A2) |
申请公布日期 |
1984.05.23 |
申请号 |
EP19830303858 |
申请日期 |
1983.07.01 |
申请人 |
FUJITSU LIMITED |
发明人 |
NOZAKI, SHIGEKI;NAKANO, TOMIO;KABASHIMA, KATSUHIKO |
分类号 |
G11C11/401;G11C5/14;G11C11/407;G11C11/408;G11C11/409;G11C11/4094;H01L27/10;H03K17/22;(IPC1-7):11C8/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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