| 发明名称 |
ELECTRONIC DEVICE |
| 摘要 |
Provided is an electronic device including a semiconductor memory. The semiconductor memory includes first and second selecting elements coupled to a variable resistance element, and each of the first and second selecting elements includes a single-electron transistor. |
| 申请公布号 |
US2016343839(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201514879450 |
申请日期 |
2015.10.09 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Kyung-Wan |
| 分类号 |
H01L29/76;H01L45/00;H01L27/22;H01L27/115;G06F12/08;H01L27/24 |
主分类号 |
H01L29/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
a variable resistance element; and first and second selecting elements coupled to the variable resistance element, wherein each of the first and second selecting elements comprises a single-electron transistor. |
| 地址 |
Icheon KR |
