| 主权项 |
1. A switching device comprising:
a first opening disposed in a substrate comprising a major surface, the first opening extending into the substrate along a first direction from the major surface; a first source disposed adjacent the first opening and having a contact surface parallel to sidewalls of the first opening; a first drain disposed adjacent the first opening and having a contact surface parallel to the sidewalls of the first opening; a dielectric layer disposed between the first source and the first drain, the dielectric layer isolating the first source from the first drain; and a first moveable gate stack comprising a first channel and a first gate disposed within the first opening, wherein the switching device comprises an ON state and an OFF state, and wherein, in the ON state, the switching device is configured to conduct a current parallel to the first direction. |
